异质结构光子晶体的能带特性研究

运用光学传输矩阵理论,研究了异质结构光子晶体的能带特性。结果表明,与周期结构相比异质结构光子晶体可以显著地拓宽光子晶体的光子带隙;在该文提出的结构中引入缺陷,与(1H1L)m(1H)n(1L1H)m光子晶体相比,产生缺陷模式光子带隙范围明显拓宽,适当调整缺陷层的数目、位置和厚度可得到多通道滤波;并研究了实际操作中随机误差带来的影响,随无序度的增大,其带宽基本不变。     

Carbon-13 NMR evidence for cocrystallization of cellulose as a mechanism for hornification of bleached kraft pulp

Solid-state ¹³C NMR spectroscopy was used to characterize a bleached softwood kraft pulp in the never-dried state and after cycles of drying and remoistening. Changes in NMR signal strengths indicated that growth of crystalline domains involved cocrystallization rather than accretion of cellulose from noncrystalline domains. A cluster of C-4 signals at 89.4 ppm, assigned to the interiors of crystalline domains, grew at the expense of C-4 signals at 84.0 and 84.9 ppm, assigned to the well-ordered surfaces of crystalline domains. Irreversible changes were not detected until the moisture content dropped below 18%. They were enhanced by a second drying/remoistening cycle, but showed little further change on subsequent cycles. The necessary conditions resembled those reported for hornification, suggesting that cocrystallization might provide a mechanism for hornification.     

Photoluminescence activity of Yang and Secco etched multicrystalline silicon material

Ultraviolet and blue-green photoluminescence (PL) was investigated on multicrystalline silicon (mc-Si) samples chemically etched by Secco and Yang solutions. The samples were characterized by dislocation density (10⁵-10⁶ cm⁻²). The form of etched pits is triangular with Yang etch and like a honeycomb with Secco etch as observed with a scanning electron microscope (SEM). These textures of mc-Si wafers give a PL activity similar to that obtained with nanostructures of porous silicon (PS) as reported in the literature. The ultraviolet PL spectra observed with Yang etch shift to the blue-green spectrum range when applying Secco etch. In our experiments we have observed 3-5 μm diameter macro pores separated by a high density of nanowalls. These observations suggest that the origin of the PL activity are quantum dots resulting from the silicon nanocrystallites obtained after few minutes of chemical etching.     

Liquid phase oxidation of p-chlorotoluene to p-chlorobenzaldehyde over cobalt-doped mesoporous titania with a crystalline framework

Cobalt-doped mesoporous titania with a crystalline framework synthesized by surfactant templating method presented highly selective (99%) and reasonable conversion rate (49%) of catalytic oxidation of para-chlorotoluene to para-chlorobenzaldehyde in acetic acid using aqueous hydrogen peroxide as oxidant for the first time. Recycling of the catalyst indicates that the catalyst can be used a number of times without losing its activity to a greater extent. By contrast, cobalt-doped mesoporous titania without a crystalline structure and cobalt doped the commercial titania, Degussa P25 prepared by impregnation method with the similar concentration of cobalt were found inactive. The effects of catalyst concentration, reaction time, reaction temperature, and solvents on the performance of the catalyst were also investigated.     

正丁基苝四羧酸二酰亚胺的晶型和性能研究

文章合成了N,N'-二正丁基苝四羧酸二酰亚胺,并纯化、调晶,进行了IR、元素分析、X射线等测定.分析该化合物在DMF中的紫外光谱(最大吸收波长524.80 nm)、荧光光谱(最大发射波长539.0 nm)、Stokes位移(数值15 nm)等光谱性质.在400～700 nm范围内,α晶型薄膜紫外-可见吸收出现很强的吸收峰,且由β型变为α型,最大吸收波长有明显的红移(545 nm变为580 nm).X射线粉末衍射也反映出α晶型的2θ在26.0°处衍射峰CPS为2 508,β型在25.2°为1 891.α,β晶型作为电荷产生材料制得的功能分离型有机光导体,在光源滤波波长λ=532 nm曝光下,测得含α,β感光体达到饱和电位的时间分别为46,93.98 s,光衰电位(5.3千伏电压负充电电晕,1～2 s后的表面电位)分别为727和525 V,半衰曝光量分别为4.32,4.34μJ·cm-2,残余电位分别为30和45 V等光导性能数值.     

Electron g-factor in a gated InAs-inserted-channel In0.53Ga0.47As/In0.52Al0.48As heterostructure

We report on electron g-factor in an InAs-inserted In_0.53Ga_0.47As/In_0.52Al_0.48As heterostructure. The gate voltage dependence of g-factor is obtained from the coincidence method. The obtained g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and it is close to the bare g-factor value of In_0.53Ga_0.47As. The large change in g-factor is observed by applying the gate voltage. The obtained gate voltage dependence is not simply explained by the energy dependence of g-factor.     

Laser Annealing of Thin-Film Ferroelectric Heterostructures

Preliminary experiments on laser annealing of ferroelectric samples by ultraviolet radiation of a KrF laser are carried out. In principle, laser annealing allows one to reduce appreciably the duration of thermal action, minimize the size of the samples treated, and control the crystallization processes in the samples. A special focussing system was employed to provide homogeneous irradiation of the spot with dimensions of ~1×1 cm² within a broad energy range from 0.1 to 10~J per pulse. The range of energy densities leading to phase transitions in thin films is determined.     

有机/无机异质结薄膜发光二极管

聚合物发光二极管（LED）自从Burrou吵es等于1990年首次报导PPV的电致发光［‘］以来，由于聚合物半导体具有热和化学性能的稳定，克眼了有机小分子材料容易晶化的优点，在平板显示领域必将占有一席之地，从而吸引了许多科学家投身到这一领域来．众所周知，要想实现LED的实用化     

结晶聚合物的中间层

介绍了结晶聚合物中间层概念及各种实验技术所提供的中间层存在的证据。附25篇参考文献。     

晶性3，4－聚异戊二烯的结构研究

采用ＷＡＸＤ、ＳＡＸＳ和Ｘ－射线平板照相法研究了不同聚合条件和拉伸倍数下的晶性３，４－聚异戊二烯的结构．结果发现，降低催化体系反应速度有利于产物结晶；不同的含氮类给电子试剂对聚合物的结晶结构影响较大．取向样品随着拉伸倍数的增加结晶度和长周期增大，微晶尺寸变小．ＳＡＸＳ的散射强度计算表明，该聚合物属多分散非均一粒子体系，微孔半径在３．５－１６．４ｎｍ间．